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| Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V N-Channel 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V 8 at VGS = - 4.5 V P-Channel - 20 12 at VGS = - 2.5 V 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) 200 175 150 50 - 150 - 125 - 100 - 30 FEATURES * * * * * Halogen-free Option Available TrenchFET(R) Power MOSFET: 1.5 V Rated Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 5 P-Channel, 8 Low Threshold: 0.9 V (typ.) Fast Switching Speed: 45 ns (typ.) 1.5 V Operation Gate-Source ESD Protected: 2000 V RoHS COMPLIANT * * * * BENEFITS SC-89 S1 1 6 D1 * * * * * Marking Code: M Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation G1 2 5 G2 APPLICATIONS D2 3 4 S2 Top View Ordering Information: Si1035X-T1-E3 (Lead (Pb)-free) SI1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) * * * * Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Currentb TA = 25 C TA = 85 C TA = 25 C TA = 85 C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 190 140 650 380 250 130 - 55 to 150 2000 - 450 280 145 180 130 5s Steady State 20 5 - 155 - 110 - 650 - 380 250 130 mW C V - 145 - 105 mA 5s P-Channel Steady State - 20 Unit V Continuous Source Current (Diode Conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1035X Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 2.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 C VDS = - 16 V, VGS = 0 V, TJ = 85 C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 150 mA VGS = 2.5 V, ID = 175 mA Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = 125 mA VGS = 1.8 V, ID = 150 mA VGS = - 1.8 V, ID = - 100 mA VDS = 1.5 V, ID = 40 mA VDS = - 1.5 V, ID = - 30 mA Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA N-Channel VDD = 10 V, RL = 47 ID 250 mA, VGEN = 4.5 V, RG = 10 P-Channel VDD = - 10 V, RL = 65 ID - 150 mA, VGEN = - 4.5 V, RG = 10 N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1500 75 150 225 450 75 80 ns 75 90 Turn-Off Time tOFF pC gfs VSD VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 150 mA IS = 150 mA, VGS = 0 V IS = - 150 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.5 0.4 1.2 - 1.2 250 - 200 5 8 7 12 9 15 10 20 S V 0.40 - 0.40 0.5 0.5 1.5 1.0 1 -1 1.0 1.0 3.0 3.0 500 - 500 10 - 10 nA A mA A V Symbol Test Conditions Min. Typ. Max. Unit Turn-On Time tON Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.5 VGS = 5 thru 1.8 V 0.4 I D - Drain Current (mA) I D - Drain Current (A) 600 TJ = - 55 C 500 25 C 400 125 C 300 0.3 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 40 100 Transfer Characteristics VGS = 0 V f = 1 MHz R DS(on) - On-Resistance () 80 C - Capacitance (pF) 30 Ciss 60 20 40 Coss VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 250 20 0 0 Crss 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA (Normalized) 1.2 VGS = 1.8 V ID = 175 mA 3 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 3 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1000 TJ = 125 C R DS(on) - On-Resistance () 40 I S - Source Current (mA) 50 ID = 200 mA 100 TJ = 25 C 30 ID = 175 mA 10 TJ = 50 C 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (A) 2.5 2.0 0.0 1.5 - 0.1 1.0 VGS = 2.8 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (C) TJ - Temperature (C) Threshold Voltage Variance vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.5 VGS = 5 thru 2.5 V 0.4 ID - Drain Current (A) 1.8 V 0.3 I D - Drain Current (mA) 2V 400 500 TJ = - 55 C 25 C 300 125 C 0.2 200 0.1 100 0.0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 25 VGS = 1.8 V R DS(on) - On-Resistance () 20 C - Capacitance (pF) 120 Transfer Characteristics 100 VGS = 0 V f = 1 MHz 80 Ciss 15 VGS = 2.5 V 10 VGS = 4.5 V 5 60 40 Coss 20 Crss 0 4 8 12 16 20 0 0 200 400 600 800 1000 0 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 150 mA (Normalized) 1.2 3 2 1.0 VGS = 1.8 V ID = 125 mA 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 5 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1000 TJ = 125 C RDS(on) - On-Resistance () 40 ID = 150 mA 30 I S - Source Current (mA) 50 100 TJ = 25 C TJ = - 55 C 10 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - S o ur c e-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (A) 2.5 2.0 VGS = 2.8 V 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (C) TJ - Temperature (C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 0 -1 -2 -3 -4 -5 -6 -7 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (C) BVGSS vs. Temperature www.vishay.com 6 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71426. Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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